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?2009 fairchild semiconductor corporation rev.b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T november 2009 superfet tm fcp11n60 / fcpf11n60 / FCPF11N60T general description superfet tm is, fairchild?s proprietary, new generation of high voltage mosfet family t hat is utilizing an advanced charge balance mechanism for outstanding low on- resistance and lower gate charge performance. this advanced technology has been tailo red to minimize conduction loss, provide superio r switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conversion in switching mode operation for system miniatur ization and higher efficiency. features ? 650v @ tj = 150c ? typ. rds(on) = 0.32 ? ultra low gate charge (typ. qg=40nc) ? low effective output capacitance (typ. coss.eff = 95pf) ? 100% avalanche tested ? rohs compliant absolute maximum ratings t c = 25c unless otherwise noted symbol parameter fcp11n60 fcpf11n60(t) units i d drain current - continuous (t c = 25c) 11 11* a - continuous (t c = 100c) 7 7* a i dm drain current - pulsed (note 1) 33 33* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 340 mj i ar avalanche current (note 1) 11 a e ar repetitive avalanche energy (note 1) 12.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 125 36 w - derate above 25c 1.0 0.29 w/ c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 c thermal characteristics symbol parameter fcp11n60 fcpf11n60(t) units r jc thermal resistance, junction-to-case 1.0 3.5 c /w r cs thermal resistance, case-to-sink 0.5 -- c /w r ja thermal resistance, junction-to-ambient 62.5 62.5 c /w { { { ? { { { ? s d g * drain current limited by maximum junction termperature. g d s to-220ab fcp series to-220f fcpf series g s d
rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T ?2009 fairchild semiconductor corporation elerical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a, t j = 25c 600 -- -- v v gs = 0 v, i d = 250 a, t j = 150c -- 650 -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.6 -- v/c bv ds drain-source avalanche break - down voltage v gs = 0 v, i d = 11 a -- 700 -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 1 a v ds = 480 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, for - ward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a -- 0.32 0.38 g fs forward transconductance v ds = 40 v, i d = 5.5 a (note 4) -- 9.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1148 1490 pf c oss output capacitance -- 671 870 pf c rss reverse transfer capacitance -- 63 82 pf c oss output capacitance v ds = 480 v, v gs = 0 v, f = 1.0 mhz -- 35 -- pf c oss eff. effective output capacitance v ds = 0v to 480 v, v gs = 0 v -- 95 -- pf esr equivalent series resistance drain open, f=1mhz -- 2.5 -- switching characteristics t d(on) turn-on delay time v dd = 300 v, i d = 11 a, r g = 25 (note 4, 5) -- 34 80 ns t r turn-on rise time -- 98 205 ns t d(off) turn-off delay time -- 119 250 ns t f turn-off fall time -- 56 120 ns q g total gate charge v ds = 480 v, i d = 11 a, v gs = 10 v (note 4, 5) -- 40 52 nc q gs gate-source charge -- 7.2 -- nc q gd gate-drain charge -- 21 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 11 a i sm maximum pulsed drain-source diode forward current -- -- 33 a v sd drain-source diode forward volt - age v gs = 0 v, i s = 11 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 11 a, di f / dt = 100 a/ s (note 4) -- 390 -- ns q rr reverse recovery charge -- 5.7 -- c notes: 1. repetitive rating : pulse width li m ited by maximum junction temperature 2. i as = 5.5a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 11a, di/dt 200a/ s, v dd b v dss, starting t j = 25 c 4. pulse test : pulse width 300 s, dut y cycle 2% 5. essentially independent of operating temperature
?2009 fairchild semiconductor corporation rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T typical characteristics figure 5. capacitance characteristics figu re 6. gate charge characteristics figure 2. transfer characteristics figure 1. on-region characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 p s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 * note 1. v ds = 40v 2. 250 p s pulse test -55 o c 150 o c 25 o c i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 11a v gs , gate-source voltage [v] q g , total gate charge [nc] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 25 o c 150 o c * notes : 1. v gs = 0v 2. 250 p s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature
?2009 fairchild semiconductor corporation rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T typical characteristics (continued) -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 5.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 i d , drain current [a] t c , case temperature [ o c] figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 9-1. maximum safe operating area for fcp11n60 figure 10. maximum drain current vs. case temperature 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 us dc 100 ms 10 ms 1 ms operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 9-2. maximum safe operating area for fcpf11n60(t)
rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T ?2009 fairchild semiconductor corporation typical characteristics (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 1.0 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 3.5 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square w ave pulse duration [sec] figure 11-1. transient thermal response curve for fcp11n60 figure 11-2. transient thermal response curve fo r fcpf11n60(t) t 1 p dm t 2
?2009 fairchild semiconductor corporation rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k n 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k n 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
?2009 fairchild semiconductor corporation rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
rev. b2, october 2003 ?2009 fairchild semiconductor corporation fcp11n60 / fcpf11n60 / FCPF11N60T mechanical dimensions dimensions in millimeters to-220ab
rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T ?2009 fairchild semiconductor corporation mechanical dimensions (7.00) (0.70) max1.47 (30) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f dimensions in millimeters
rev. b2, october 2003 fcp11n60 / fcpf11n60 / FCPF11N60T ?2009 fairchild semiconductor corporation package dimensions dimensions in millimeters to-220f potted * front/back side isolation voltage : ac 2500v
trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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